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| 2SC4445 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4445 900 800 7 3(Pulse6) 1.5 60(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose External Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=0.7A IC=0.7A, IB=0.14A IC=0.7A, IB=0.14A VCE=12V, IE=-0.3A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 15typ 50typ (Ta=25C) 2SC4445 Unit A 23.00.3 V V V MHz pF 9.50.2 A a b 16.2 1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 357 IC (A) 0.7 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.1 IB2 (A) -0.35 ton (s) 0.7max tstg (s) 4max tf (s) 0.7max 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 3 VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V ) (IC/I B= 5) I C - VBE Temperature Characteristics (Typical) 3 (VCE=4V) IB=700mA 500 mA V C E( sat) 2 25C (Case Temp) 125C (Case Temp) Collector Current I C (A) 300m A Collector Current I C (A) -55C (Case Temp) 2 200m A 2 mp) mp) 100mA 1 V B E( sat) p) -55C (Case Tem p) 25C (Case Tem Temp) 125C (Case (Cas Cas 25C 50mA C ( 1 1 0 0 1 2 3 4 0 0.01 0.05 0.1 0.5 1 3 0 0 0.2 0.4 0.6 0.8 -55C 125 (Cas e Tem e Te e Te p) 1.0 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) h FE - IC Temperature Characteristics (Typical) (VCE=4V) 50 DC C urrent G ain h FE t on* t stg * t f - I C Characteristics (Typical) j - a( C/W) 7 5 VCC 250V I C: I B1: -I B 2= 10:1.5:5 1 tf 0.5 ton 0.1 0.1 t s tg 4 j-a - t Characteristics -55C 10 Transient Thermal Resistance 25C Sw it ching Time ton*t s t g*t f ( s) 125C 1 5 0.5 0.3 2 0.01 0.05 0.1 0.5 1 3 0.5 Collector Current I C( A) 1 2 1 10 Time t(ms) 100 3.0 1.2 1000 Collector Current I C( A) Safe Operating Area (Single Pulse) 10 5 50 s Reverse Bias Safe Operating Area 10 5 60 P c - T a Derating Ma xim um Powe r Dissipat io n P C( W) W 10 ith Collector Curr ent I C (A) Collector Curr ent I C (A) 0 s 40 In fin ite 1 0.5 1 0.5 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% he at si nk 20 Without Heatsink Natural Cooling 0.1 0.05 5 10 50 100 500 1000 Collector-Emitter Voltage V C E( V) 0.1 0.05 5 Without Heatsink 100 500 1000 3.5 0 0 50 100 150 10 50 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 105 |
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